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MINI RESEARCH SERIES

     In February 2000; APT introduced the Mini Research Series (MRS). The series includes PVD (RF/DC Magnetron Sputter), CVD (Plasma Enhanced) and Reactive Ion Etch Systems. These simple designs are maintenance free and offer the best process package for Research Laboratories.

     The system has been designed for a wide range of process variables to give maximum process control. Extra ports have been provided to the system for adding additional diagnostic probes for Research.

SWATI MRS1A
RF/DC/pulsed DC Magnetron Sputter Deposition System
    Process Capability
  • Sputter Deposition of metals/non metals magnetic or non magnetic films
  • Proprietary 6" RF/DC Magnetron Cathode technology gives excellent Uniformity
  • Substrate Bias (option)
  • Adjustable Substrate to Target spacing
  • Heated Substrate
  • Reactive Sputtering
CHITRA MRS 2A
(Plasma Enhanced) CVD Deposition System
    Process Capability
  • CVD (Plasma Enhanced) Deposition of Silicon Nitride, Polysilicon, low temperature Silicon Dioxide, Silicon Oxynitride, Boron/Phosphorus doped Oxide, Tungsten and many other films.
  • Proprietary temperature controlled Gas/Liquid Delivery System for uniform deposition
  • Adjustable Substrate to Target spacing.
ROHINI MRS 3A
Reactive Ion Etch System
    Process Capability
  • Process gases and chemistry will vary depending on the material to be etched.
  • Etching of Silicon Dioxide, Silicon Nitride, Polysilicon, Single Crystal GaAs, Aluminum, Molybdenum, Tungsten, Titanium, Ti:W, Ti Silicide, Ta Silicide, W Silicide, Gold etc..
  • Upto 4 process gases can be used.
  • 300 W RF Power supply
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  System Specifications
    Process Chamber
    Sputter and CVD system constructed from 304 Stainless Steel (Electropolished 14" dia.) with a 2.5" View Port, bake out heater jacket and water cooling. The Reactive Ion Etch chamber is constructed from Aluminum alloy.
    Vacuum
    High Vacuum - Turbo, Diffusion Rough - Rotary Vane Vacuum Stages - Process Chamber < 1E-7 torr (1.3E-10 bar) Turbopump
    < 5E-7 torr (6.5E-10 bar)Diffusion
    < 5E-7 torr (6.5E-10 bar) Diffusion
    Footprint
    Process Module with Power/Control Cabinet 0.75 m x 1 m (2.5' x 3.3')
    Controls
    Semi Automatic Control - Pump Down Sequence for the process is automatic. Safety interlocks provided
    Target
    4" diameter round target (For SWATI MRS1A Sputter Syatem only)
    Uniformity
    Deposition Within substrate (3" diameter) < 5% 3-sigma
    (49 point mapping; 6 mm edge exclusion)
    Cycle Time
    < 3 hours
    Substrate
    One Substrate(3" diameter)
    Options
  • Substrate Bias (RF/DC)
  • Target Shutter
  • Substrate Etch/preclean
  • Adjustable Substrate to Target spacing
  • Thickness Monitor
  • Liquid Nitrogen or Cryo Compressor cold trap
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